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2SC1907
Silicon NPN Epitaxial Planar
REJ03G0694-0200 (Previous ADE-208-1059) Rev.2.00 Aug.10.2005
Application
UHF TV Tuner, Local oscillator
Outline
RENESAS Package code: PRSS0003DA-C (Package name: TO-92 (2))
1. Emitter 2. Collector 3. Base
3 2 1
Absolute Maximum Ratings
(Ta = 25C)
Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Emitter current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC IE PC Tj Tstg Ratings 30 19 2 50 -50 300 150 -55 to +150 Unit V V V mA mA mW C C
Rev.2.00 Aug 10, 2005 page 1 of 5
2SC1907
Electrical Characteristics
(Ta = 25C)
Item Collector to base breakdown voltage Collector to emitter breakdown voltage Emitter to base breakdown voltage Collector cutoff current DC current transfer ratio Collector to emitter saturation voltage Collector output capacitance Gain bandwidth product Base time constant Oscillation output power Symbol V(BR)CBO V(BR)CEO V(BR)EBO ICBO hFE VCE(sat) Cob fT rbb' * CC Pout Min 30 19 2 -- 40 -- -- 900 -- -- Typ -- -- -- -- -- 0.2 1.0 1100 10 8 Max -- -- -- 0.5 -- 1.0 2.0 -- 25 -- Unit V V V A V pF MHz ps mW Test conditions IC = 10 A, IE = 0 IC = 3 mA, RBE = IE = 10 A, IC = 0 VCB = 10 V, IE = 0 VCE = 10 V, IC = 10 mA IC = 20 mA, IB = 4 mA VCB = 10 V, IE = 0, f = 1 MHz VCE = 10 V, IC = 10 mA VCB = 10 V, IC = 10 mA, f = 31.8 MHz VCB = 10 V, IC = 10 mA, f = 930 MHz
Rev.2.00 Aug 10, 2005 page 2 of 5
2SC1907
Main Characteristics
Maximum Collector Dissipation Curve
Collector Power Dissipation PC (mW)
300 20
Typical Output Caracteristics
13 0
PC
Collector Current IC (mA)
16
200
12
8
120 110 100 90 80 70 60 50
= 30 0 m W
100
4
40 30 20 IB = 10 A 4 8 12 16 20
0
50
100
150
0
Ambient Temperature Ta (C)
Collector to Emitter Voltage VCE (V) DC Current Transfer Ratio vs. Collector Current
200
Typical Transfer Caracteristics
20
DC Current Transfer Ratio hFE
Collector Current IC (mA)
16
VCE = 10 V
VCE = 10 V 160
12
120
8
80
4
40
0
0.2
0.4
0.6
0.8
1.0
0 0.1 0.2
0.5 1.0
2
5
10
20
50
Base to Emitter Voltage VBE (V) Gain Bandwidth Product vs. Collector Current
Gain Bandwidth Product fT (MHz) Base Time Constant rbb'*CC (ps)
1,200 1,000 800 600 400 200 0 0.2 VCE = 10 V 200 100 50 20 10 5
Collector Current IC (mA) Base Time Constant vs. Collector Current
VCB = 10 V f = 31.8 MHz
0.5 1.0 2
5
10 20
50 100
2 0.1
0.2
0.5
1.0
2
5
10
Collector Current IC (mA)
Collector Current IC (mA)
Rev.2.00 Aug 10, 2005 page 3 of 5
2SC1907
Reverse Transfer Admittance Characteristics
0 1,200 MHz 1,000 900 800 yib = gib+jbib yrb = grb+jbrb 400 MHz 600 -1 -2 -3 -4
Input Admittance Characteristics
0
-10 -20 -30 -40 -50 -60 0 5
600
IC =
10 15 mA mA
VCB = 10 V Output end short
5 mA
400 VCB = 10 V Input end short
800 900 1,000
1,200 -6 10 15 20 25 30 -1.2 -1.0 -0.8 -0.6 -0.4 -0.2 0
Input Conductance gib (mS) Forward Transfer Admittance Characteristics
Reverse Transfer Conductance grb (mS)
Output Admittance Characteristics
15 yob = gob+jbob 1,200
Forward Transfer Suceptance bfb (mS)
60 yfb = gfb+jbfb 50 40 30 20 10 VCB = 10 V Output end short 800 900 1,000 1,200 0 -30 -20 -10 0 10 20 30 400 MHz
10
5m A
m
Output Suceptance bob (mS)
A
10
600
1,000 900 800 600 400 MHz VCB = 10 V Input end short
5
IC = 5 10 mA 15 mA mA
0
1.5
3.0
IC
10
-5
4.5
6.0
7.5
Forward Transfer Conductance gfb (mS)
Output Conductance gob (mS)
Rev.2.00 Aug 10, 2005 page 4 of 5
Reverse Transfer Suceptance brb (mS)
Input Suceptance bib (mS)
m A
mA
15
5m
=
A
IC =1 5m A
2SC1907
Package Dimensions
JEITA Package Code
SC-43A
RENESAS Code
PRSS0003DA-C
Package Name TO-92(2) / TO-92(2)V
MASS[Typ.] 0.25g
Unit: mm
4.8 0.3
3.8 0.3
2.3 Max
0.5 Max
0.7
0.60 Max
12.7 Min
5.0 0.2
0.5 Max
1.27 2.54
Ordering Information
Part Name 2SC1907TZ-E Quantity 2500 Shipping Container Hold Box, Radial Taping
Note: For some grades, production may be terminated. Please contact the Renesas sales office to check the state of production before ordering the product.
Rev.2.00 Aug 10, 2005 page 5 of 5
Sales Strategic Planning Div.
Keep safety first in your circuit designs!
Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan
1. Renesas Technology Corp. puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with them. Trouble with semiconductors may lead to personal injury, fire or property damage. Remember to give due consideration to safety when making your circuit designs, with appropriate measures such as (i) placement of substitutive, auxiliary circuits, (ii) use of nonflammable material or (iii) prevention against any malfunction or mishap. Notes regarding these materials 1. These materials are intended as a reference to assist our customers in the selection of the Renesas Technology Corp. product best suited to the customer's application; they do not convey any license under any intellectual property rights, or any other rights, belonging to Renesas Technology Corp. or a third party. 2. Renesas Technology Corp. assumes no responsibility for any damage, or infringement of any third-party's rights, originating in the use of any product data, diagrams, charts, programs, algorithms, or circuit application examples contained in these materials. 3. All information contained in these materials, including product data, diagrams, charts, programs and algorithms represents information on products at the time of publication of these materials, and are subject to change by Renesas Technology Corp. without notice due to product improvements or other reasons. It is therefore recommended that customers contact Renesas Technology Corp. or an authorized Renesas Technology Corp. product distributor for the latest product information before purchasing a product listed herein. The information described here may contain technical inaccuracies or typographical errors. Renesas Technology Corp. assumes no responsibility for any damage, liability, or other loss rising from these inaccuracies or errors. Please also pay attention to information published by Renesas Technology Corp. by various means, including the Renesas Technology Corp. Semiconductor home page (http://www.renesas.com). 4. When using any or all of the information contained in these materials, including product data, diagrams, charts, programs, and algorithms, please be sure to evaluate all information as a total system before making a final decision on the applicability of the information and products. Renesas Technology Corp. assumes no responsibility for any damage, liability or other loss resulting from the information contained herein. 5. Renesas Technology Corp. semiconductors are not designed or manufactured for use in a device or system that is used under circumstances in which human life is potentially at stake. Please contact Renesas Technology Corp. or an authorized Renesas Technology Corp. product distributor when considering the use of a product contained herein for any specific purposes, such as apparatus or systems for transportation, vehicular, medical, aerospace, nuclear, or undersea repeater use. 6. The prior written approval of Renesas Technology Corp. is necessary to reprint or reproduce in whole or in part these materials. 7. If these products or technologies are subject to the Japanese export control restrictions, they must be exported under a license from the Japanese government and cannot be imported into a country other than the approved destination. Any diversion or reexport contrary to the export control laws and regulations of Japan and/or the country of destination is prohibited. 8. Please contact Renesas Technology Corp. for further details on these materials or the products contained therein.
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Refer to "http://www.renesas.com/en/network" for the latest and detailed information. Renesas Technology America, Inc. 450 Holger Way, San Jose, CA 95134-1368, U.S.A Tel: <1> (408) 382-7500, Fax: <1> (408) 382-7501 Renesas Technology Europe Limited Dukes Meadow, Millboard Road, Bourne End, Buckinghamshire, SL8 5FH, U.K. Tel: <44> (1628) 585-100, Fax: <44> (1628) 585-900 Renesas Technology Hong Kong Ltd. 7th Floor, North Tower, World Finance Centre, Harbour City, 1 Canton Road, Tsimshatsui, Kowloon, Hong Kong Tel: <852> 2265-6688, Fax: <852> 2730-6071 Renesas Technology Taiwan Co., Ltd. 10th Floor, No.99, Fushing North Road, Taipei, Taiwan Tel: <886> (2) 2715-2888, Fax: <886> (2) 2713-2999 Renesas Technology (Shanghai) Co., Ltd. Unit2607 Ruijing Building, No.205 Maoming Road (S), Shanghai 200020, China Tel: <86> (21) 6472-1001, Fax: <86> (21) 6415-2952 Renesas Technology Singapore Pte. Ltd. 1 Harbour Front Avenue, #06-10, Keppel Bay Tower, Singapore 098632 Tel: <65> 6213-0200, Fax: <65> 6278-8001 Renesas Technology Korea Co., Ltd. Kukje Center Bldg. 18th Fl., 191, 2-ka, Hangang-ro, Yongsan-ku, Seoul 140-702, Korea Tel: <82> 2-796-3115, Fax: <82> 2-796-2145
http://www.renesas.com
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(c) 2005. Renesas Technology Corp., All rights reserved. Printed in Japan.
Colophon .3.0

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